(China (Mainland))
Product Summary
Designed for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,and power amplifiers.
Parametrics
MAXIMUM RATINGS:
(1)Collector-Emitter Voltage:80VdcEmitter; (2)Base Voltage:5Vdc; (3)Collector Current-Continuous:8Adc;Peak16Adc; (4)Total Power Dissipation@ TC = 25°C:20W/℃;Derate above 25℃:0.16W/℃; (5)Total Power Dissipation (Note 1):@ TA = 25℃:1.75W/℃;Derate above 25℃:0.014W/℃; (6)Operating and Storage JunctionTemperature Range:-55℃ to +150℃
Features
(1)Lead Formed for Surface Mount Application in Plastic Sleeves(No Suffix); (2)Straight Lead Version in Plastic Sleeves (“-1” Suffix); (3)Electrically Similar to Popular D44H/D45H Series; (4)Low Collector Emitter Saturation Voltage-VCE(sat) = 1.0 Volt, Max @ 8.0 Amperes; (5)Fast Switching Speeds; (6)Complementary Pairs Simplifies Designs; (7)Epoxy Meets UL 94 V-0 @ 0.125 in; (8)ESD Ratings: Human Body Model, 3B u 8000 V;Machine Model, Cu 400 V; (9)Pb-Free Packages are Available
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/20127233930190.jpg">
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 MJD44H11T4G |
ON Semiconductor |
Transistors Bipolar (BJT) 8A 80V 20W NPN |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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MJD41CT4 |
ON Semiconductor |
Transistors Bipolar (BJT) 6A 100V 20W NPN |
Data Sheet |
Negotiable |
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MJD42C1 |
ON Semiconductor |
Transistors Bipolar (BJT) 6A 100V 20W PNP |
Data Sheet |
Negotiable |
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MJD42C1G |
ON Semiconductor |
Transistors Bipolar (BJT) 6A 100V 20W PNP |
Data Sheet |
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MJD42CG |
ON Semiconductor |
Transistors Bipolar (BJT) 6A 100V 20W PNP |
Data Sheet |
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MJD44H11T4G |
ON Semiconductor |
Transistors Bipolar (BJT) 8A 80V 20W NPN |
Data Sheet |
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MJD44H11TF |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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