AT49BV040B-JU

4-megabit (512K x 8) Flash Memory

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PartNumber:: AT49BV040B-JU

Brand:: ATMEL Corporation - ATMEL | Pack: PLCC | D/C: 09+

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Products Upload time: 2012-07-17

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Product Summary

The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured withAtmel’s advanced nonvolatile CMOS technology, the device offers an access time of70 ns (VCC = 2.7V to 3.6V) and an access time of 55 ns (VCC = 4.5V to 5.5V). Thepower dissipation over the industrial temperature range with VCC = 2.7V to 3.6V is 72mW and is 110 mW with VCC = 4.5V to 5.5V.When the device is deselected, the CMOS standby current is less than 30 μA.

Parametrics

Absolute Maximum Ratings:
(1)Temperature Under Bias:-55℃ to +125℃; (2)Storage Temperature:-65℃ to +150℃; (3)All Input Voltages(including NC Pins)with Respect to Ground:-0.6V to +6.25V; (4)All Output Voltageswith Respect to Ground:-0.6V to VCC + 0.6V; (5)Voltage on A9with Respect to Ground:-0.6V to +10.0V

Features

(1)Single Supply for Read and Write: 2.7V to 5.5V; (2)Fast Read Access Time – 70 ns (VCC = 2.7V to 3.6V); 55 ns (VCC = 4.5V to 5.5V); (3)Internal Program Control and Timer; (4)Flexible Sector Architecture:One 16K Bytes Boot Sector with Programming Lockout;Two 8K Bytes Parameter Sectors;Eight Main Memory Sectors (One 32K Bytes, Seven 64K Bytes); (5)Fast Erase Cycle Time – 8 Seconds; (6)Byte-by-Byte Programming – 10 μs/Byte Typical; (7)Hardware Data Protection; (8)DATA Polling or Toggle Bit for End of Program Detection; (9)Low Power Dissipation:20 mA Active Current;25 μA CMOS Standby Current for VCC = 2.7V to 3.6V;30 μA CMOS Standby Current for VCC = 4.5V to 5.5V; (10)Minimum 100,000 Write Cycles