(China (Mainland))
Product Summary
IS62WV25616BLL-55BLI
Parametrics
ABSOLUTE MAXIMUM RATINGS:
- Terminal Voltage with Respect to GND:-0.2 to VDD+0.3 V
- VDD Related to GND:-0.2 to VDD+0.3 V
- Storage Temperature: -65 to +150℃
- Power Dissipation:1.0 W
Features
1.High-speed access time: 55ns, 70ns
2.CMOS low power operation
36 mW (typical) operating
9 μW (typical) CMOS standby
3.TTL compatible interface levels
4.Single power supply
1.65V--2.2V VDD (IS62WV25616ALL)
2.5V--3.6V VDD (IS62WV25616BLL)
5. Fully static operation: no clock or refresh
required
6.Three state outputs
7.Data control for upper and lower bytes
8.Industrial temperature available
9.Lead-free available
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IS62WV25616BLL-55BLI |
ISSI |
SRAM 4Mb 256Kx16 55ns Async SRAM |
Data Sheet |
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IS62WV25616BLL-55BLI-TR |
ISSI |
SRAM 4Mb 256Kx16 55ns Async SRAM |
Data Sheet |
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