(China (Mainland))
Product Summary
The MJD31CG is a kind of silicon power transistor. The device is available in DPAK (Pb-Free) package. It is designed for general purpose amplifier and low speed switching applications. It is electrically similar to popular TIP31. The epoxy meets UL 94, V-0 @ 0.125 in. In addition, it is complementary with MJD32CG.
Parametrics
Absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 100 Vdc; (2)Collector-Base Voltage, VCB: 100 Vdc; (3)Emitter-Base Voltage, VEB: 5 Vdc; (4)Collector Current, IC: Continuous: 3 Adc; Peak: 5 Adc; (5)Base Current, IB: 1 Adc; (6)Total Power Dissipation @ TC = 25℃, PD: 15 W; (7)Total Power Dissipation @ TA = 25℃, PD: 1.56 W; (8)Operating and Storage Junction Temperature Range, TJ, Tstg: -65 to +150℃.
Features
Features: (1)Lead Formed for Surface Mount Applications in Plastic Sleeves; (2)Straight Lead Version in Plastic Sleeves ("I" Suffix); (3)Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); (4)Electrically Similar to Popular TIP31 and TIP32 Series; (5)Epoxy Meets UL 94, V-0 @ 0.125 in; (6)ESD Ratings: Human Body Model, 3B＞8000 V; Machine Model, C＞400 V; (7)Pb-Free Packages are Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MJD31CG |
ON Semiconductor |
Transistors Bipolar (BJT) 3A 100V 15W NPN |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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MJD3055 |
ON Semiconductor |
Transistors Bipolar (BJT) 10A 60V 20W NPN |
Data Sheet |
Negotiable |
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MJD3055G |
ON Semiconductor |
Transistors Bipolar (BJT) 10A 60V 20W NPN |
Data Sheet |
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MJD3055T4 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Gen Pur Switch |
Data Sheet |
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MJD3055T4G |
ON Semiconductor |
Transistors Bipolar (BJT) 10A 60V 20W NPN |
Data Sheet |
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MJD3055TF |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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MJD30CTF |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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