Product Summary

This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

Parametrics

Absolute Maximum Ratings:(1)Collector-Emitter Voltage:40V; (2)Collector-Base Voltage:40V; (3)Emitter-Base Voltage:12V; (4)Collector Current:1.2A; (5)Operating and Storage Junction Temperature Range:-55℃ to +150℃

Features

Electrical Characteristics:
1.Off Characteristics
(1)Collector-Emitter Breakdown Voltage *(IC = 10mA, IB = 0):40V
(2)Collector-Base Breakdown Voltage(IC = 0.1μA, IE = 0):40V
(3)Emitter-Base Breakdown Voltage(IE = 0.1μA, IC =0):12V
(4)Collector Cut-off Current(VCB = 40V, IE = 0):0.1μA;(VCB = 40V, IE = 0, TA = 100°C):20μA
(5)Reverse Base Current(VEB = 12V, IC = 0):0.1μA
2.On Characteristics
(1)Current Gain(VCE = 5.0V, IC = 2.0mA):2000-20000;(VCE = 5.0V, IC = 100mA):6000-20000
(2)Collector-Emitter Saturation Voltage(IC = 200mA, IB=0.2mA):1.4V
(3)Base-Emitter Saturation Voltage(IC = 200mA, IB = 0.2mA):1.6V
(4)Base-Emitter On Voltage(IC = 200mA,VCE = 5.0V):1.5V
3.Small Signal Characteristics
(1)Output Capacitance(VCB = 10V, f = 1.0MHz):10pF
(2)Small-Signal Current Gain(IC = 2.0mA, VCE = 5.0V,f = 1.0kHz):2000;(IC = 2.0mA, VCE = 5.0V,f = 10MHz):6.0

Diagrams

<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/2012765242242.jpg">

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N5307
2N5307
Fairchild Semiconductor
Transistors Darlington NPN Transistor Darlington
Data Sheet
Negotiable 
2N5307_Q
2N5307_Q
Fairchild Semiconductor
Transistors Darlington NPN Transistor Darlington
Data Sheet
Negotiable 
2N5307_D74Z
2N5307_D74Z
Fairchild Semiconductor
Transistors Darlington NPN Transistor Darlington
Data Sheet
Negotiable