IRF7313TRPBF

international rectifier utilize advanced processing techniques, fast switching speed, ruggedized device

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Price:: US $0.20~0.30 / piece [Get Latest Price]

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	US $0.20~0.30

PartNumber:: IRF7313TRPBF

Brand:: International Rectifier - IR | Pack: SOP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-03-02

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Product Summary

Fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design that hexfet power mosfet are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

Parametrics

Absolute maximum ratings(when the operation condition is Ta= 25℃): (1) drain-source voltage, Vds, the maximum valve is 30V; (2) GATE-source voltage, Vgs: the maximum valve is ±20V; (3) Continuous drain voltage, Id: the maximum valve is 6.5A; (4)pulsed drain current, Idm: the maximum valve is 30A; (5) continuous source current (diode conduction), Is: the maximum valve is 2.5A; (6) maximum power dissipation, Pd: the maximum valve is 2.0W; (7)single pulse avalanche energy, Eas, the maximum valve is 82MJ; (8)Avalanche current, Iar: the maximum valve is 4.0A; (9)Repetitive avalanche energy, Ear: the maximum valve is 0.20mj.