Product Summary

The HMC741ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplii  er  covering  0.05  to  3  GHz.  Packaged  in  an 
industry standard SOT89, the amplii er can be used as a cascadable 50 Ohm RF or IF gain stage as well  as  a  PA  or  LO  driver  with  up  to  +18.5  dBm  output 
power. The HMC741ST89E offers 20 dB of gain with a +42 dBm output IP3 at 200 MHz, and can operate directly from a +5V supply. The HMC741ST89E 
exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components.

Parametrics

Absolute Maximum Ratings:

  1. Collector Bias Voltage (Vcc): +5.5 Vdc
  2. RF Input Power (RFIN): +10 dBm
  3. Junction Temperature: 150℃
  4. Continuous Pdiss (T = 85℃)(derate 10.22 mW/℃ above 85℃):0.66 W
  5. Thermal Resistance (junction to lead):97.83℃/W
  6. Storage Temperature: -65 to +150℃
  7. Operating Temperature: -40 to +85℃
  8. ESD Sensitivity (HMB): Class 1C


Features

  1. P1dB Output Power: +18.5 dBm
  2. Gain: 20 dB
  3. Output IP3: +42 dBm
  4. Cascadable 50 Ohm I/Os
  5. Single Supply: +5V
  6. Industry Standard SOT89 Package
  7. Robust 1000V ESD, Class 1C
  8. Stable Current Over Temperature
  9. Active Bias Network

Diagrams