Product Summary
(1)N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input anddiagnostic feedback, monolithically integrated in Smart SIPMOS technology; (2)Providing embedded protective functions
Parametrics
Absolute Maximum Ratings( at Tj = 25℃ unless otherwise specified):
(1)Supply voltage:43V; (2)Supply voltage for full short circuit protection(Tj,start = -40℃ to +150℃):36V; (3)Load current:self-limited; (4)Load dump protection( VLoadDump = VA + Vs, VA = 13.5 V,R = 2Ω, td = 400 ms; IN = low or high,each channel loaded with RL = 13.5Ω):60V; (5)Operating temperature range:-40℃ to +150℃; (6)Storage temperature range:-55℃ to +150℃; (7)Power dissipation: (DC) ,Ta = 25℃:3.6W;(all channels active),Ta = 85℃:1.9W; (8)Maximal switchable inductance, single pulse:(Vbb = 12V, Tj,start = 150℃):(IL = 3.3 A, EAS = 120 mJ, 0Ω,one channel:16.5mH);IL = 4.7 A, EAS = 140 mJ, 0Ω,two parallel channels:19mH;(IL = 7.3 A, EAS = 160 mJ, 0Ω,four parallel channels:18mH; (9)Electrostatic discharge capability (ESD) IN:1.0kV;(Human Body Model) ST:4.0kV;out to all other pins shorted:8.0kV; (10)Input voltage (DC):-10 to +16V; (11)Current through input pin (DC):±0.3A; (12)Pulsed current through input pin:±5.0A; (13)Current through status pin (DC):±5.0A
Features
(1)Very low standby current; (2)CMOS compatible input; (3)Improved electromagnetic compatibility (EMC); (4)Fast demagnetization of inductive loads; (5)Stable behaviour at undervoltage; (6)Wide operating voltage range; (7)Logic ground independent from load ground
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201271825144716.jpg">
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BTS724G |
Infineon Technologies |
Power Switch ICs - POE / LAN SMART HI SIDE PWR SWITCH INDUSTRY APP |
Data Sheet |
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BTS707 |
Infineon Technologies |
Power Switch ICs - POE / LAN PROFET SMART 2 CH Hi Side Pwr SW |
Data Sheet |
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Negotiable |
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BTS716GB |
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