Product Summary

The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted inJedec TO-220 plastic package. They are intentedfor use in power linear and switching applications.The complementary PNP types are BDX34B and BDX34C respectively.

Parametrics

ABSOLUTE MAXIMUM RATINGS:
(1)Collector-Base Voltage (IE = 0):100V;
(2)Collector-Emitter Voltage (IB = 0):100V;
(3)Collector Current:10A;
(4)Collector Peak Current:15A;
(5)Base Current:0.25A;
(6)Total Dissipat ion at Tc≤ 25℃:70W;
(7)Storage Temperature:-65 to 150℃;
(8)Max. Operating Junction Temperature:150℃

Features

(1)Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C andBDX34D; (2)70 W at 25°C Case Temperature; (3)10 A Continuous Collector Current; (4)Minimum hFE of 750 at 3 V, 3 A

Diagrams

<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201271751830171.jpg">

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BDX33CG
BDX33CG
ON Semiconductor
Transistors Darlington 10A 100V Bipolar Power NPN
Data Sheet
0-1: $0.59
1-25: $0.47
25-100: $0.36
100-500: $0.32
BDX33C-S
BDX33C-S
Bourns
Transistors Darlington 100V 10A NPN
Data Sheet
0-7580: $0.45
7580-15000: $0.40
15000-19000: $0.40
BDX33CTU
BDX33CTU
Fairchild Semiconductor
Transistors Darlington NPN Si Transistor Epitaxial
Data Sheet
Negotiable 
BDX33C
BDX33C
Fairchild Semiconductor
Transistors Darlington NPN Epitaxial Sil
Data Sheet
0-1: $0.55
1-25: $0.48
25-100: $0.44
100-250: $0.38