Product Summary
The BAV70 consists of twohigh-speed switching diodes withcommon cathodes, fabricated inplanar technology, and encapsulatedin the small SOT23 plastic SMDpackage.
Parametrics
Absolute Maximum Ratings:
(1)Non repetitive peak reverse voltage:100V;
(2)Repetitive peak reverse voltage=Working peak reverse voltage=DC Blocking voltage:70V;
(3)Peak forward surge current:1A(tp=1s);4.5A(tp=1ms);
(4)Average forward current:150mA(half wave rectification with resistiveload and f≥ 50 MHz, on ceramic sub-strate 10mmx8mmx0.7mm);
(5)Forward current:250mA(on ceramic substrate10mmx8mmx0.7mm);
(6)Power dissipation:300mW(on ceramic substrate10mmx8mmx0.7mm);
(7)Junction and storagetemperature range:-55℃ to 150℃;
Features
(1)Small plastic SMD package; (2)High switching speed: max. 4 ns; (3)Continuous reverse voltage:max. 70 V; (4)Repetitive peak reverse voltage:max. 75 V; (5)Repetitive peak forward current:max. 450 mA
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201271744659533.jpg">
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BAV70 |
Taiwan Semiconductor |
Diodes (General Purpose, Power, Switching) 70 Volt 200mA 225mW |
Data Sheet |
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BAV70 /T3 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
Data Sheet |
Negotiable |
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BAV70,215 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) SW DBL 75V 215MA HS |
Data Sheet |
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BAV70,235 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
Data Sheet |
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BAV70_D87Z |
Fairchild Semiconductor |
Rectifiers 70V 200mA |
Data Sheet |
Negotiable |
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BAV70_L99Z |
Fairchild Semiconductor |
Rectifiers 70V 200mA |
Data Sheet |
Negotiable |
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BAV70_Q |
Fairchild Semiconductor |
Rectifiers 70V 200mA |
Data Sheet |
Negotiable |
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BAV70_S00Z |
Fairchild Semiconductor |
Rectifiers High Conductance Ultra Fast |
Data Sheet |
Negotiable |
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