Product Summary
The TIP35C is a silicon Epitaxial-Base NPNtransistor mounted in TO-218 plastic package. Itis intented for use in power amplifier andswitching applications.The complementary PNP type is TIP36C.Also TIP36B is a PNP type.
Parametrics
ABSOLUTE MAXIMUM RATINGS:
(1)Collector-Base Voltage (IE=0):100V; (2)Collector-Emitter Voltage (IB=0):100V; (3)Emitter-Base Voltage (IC=0):5V; (4)Collector Current:25A; (5)Collector Peak Current:50A; (6)Base Current:5A; (7)Total Dissipation at Tcase≤ 25℃:125W; (8)Storage Temperature:-65 to 150℃; (9)Max. Operating Junction Temperature:150℃
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201272442510677.jpg">
Image | Part No | Mfg | Description | ![]() |
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![]() TIP35C |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) NPN Gen Pur Power |
![]() Data Sheet |
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![]() TIP35CG |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 25A 100V 125W NPN |
![]() Data Sheet |
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![]() TIP35CP |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) Complementary power transistors |
![]() Data Sheet |
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![]() TIP35C-S |
![]() Bourns |
![]() Transistors Bipolar (BJT) 100V 25A NPN |
![]() Data Sheet |
![]() Negotiable |
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![]() TIP35CW |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) HIGH POWER TRANS |
![]() Data Sheet |
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