(China (Mainland))
Product Summary
RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.
Parametrics
ABSOLUTE MAXIMUM RATINGS(Tc=25℃ UNLESS OTHERWISE NOTED):
(1)VDSS,Drain to source voltage,Vgs=0V:30V;
(2)VGSS,Gate to source voltage,Vds=0V,+/-20V;
(3)Pch,Channel dissipation,Tc=25℃:48W;
(4)Pin,Input power,Zg=Zl=50Ω:1.5(Note2)W;
(5)ID,Drain current:4A;
(6)Tch,Channel temperature:150℃;
(7)Tstg,Storage temperature:-40℃ to +150℃;
(8)Rth j-c,Thermal resistance,junction to case:2.6℃/W
Note 1: Above parameters are guaranteed independently.
Note 2: Over 300MHz use spec is 6W
Features
(1)High power and High Gain:
Pout>15W,Gp>14dB@Vdd=12.5V,f=175MHz;
Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz;
(2)High Efficiency: 60%typ. on VHF Band;
(3)High Efficiency: 55%typ. on UHF Band
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201273125711255.jpg">
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 RD15HVF1 |
Other |
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Data Sheet |
Negotiable |
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