(China (Mainland))
Product Summary
The NE32484A is a Hetero Junction FET that utilizes thehetero junction to create high mobility electrons. Its excellentlow noise and high associated gain make it suitable for DBS,TVRO and another commercial systems.
Parametrics
ABSOLUTE MAXIMUM RATINGS (TA = 25℃):
(1)Drain to Source Voltage,VDS:4.0V;
(2)Gate to Source Voltage,VGS:-3.0V;
(3)Drain Current,ID:IDSS mA;
(4)Gate Current,IG:100μA;
(5)Total Power Dissipation,Ptot:165mW;
(6)Channel Temperature,Tch:150℃;
(7)Storage Temperature,Tstg:-65℃ to +150℃
Features
(1)Super Low Noise Figure & High Associated Gain,NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz;
(2)Gate Length : Lg≤ 0.25μm;
(3)Gate Width : Wg = 200μm
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/2012816952174.jpg">
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 NE3210S01-T1B-A |
NEC/CEL |
MOSFET Super Lo Noise HJFET |
Data Sheet |
Negotiable |
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NE325S01-T1B |
NEC/CEL |
Transistors RF GaAs Super Lo Noise HJFET |
Data Sheet |
Negotiable |
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NE325S01 |
NEC/CEL |
Transistors RF GaAs Super Lo Noise HJFET |
Data Sheet |
Negotiable |
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NE32584C-S |
NEC/CEL |
Transistors RF GaAs 84C LO NO HJ FET |
Data Sheet |
Negotiable |
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NE32584C |
Other |
|
Data Sheet |
Negotiable |
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NE32500 |
Other |
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Data Sheet |
Negotiable |
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