Product Summary

The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

Parametrics

Absolute Maximum Ratings:
1.TOTAL DEVICE:
(1)TSTG,Storage Temperature: -55 to +150℃
(2)TOPR,Operating Temperature -40 to +100℃
(3)TSOL,Lead Solder Temperature (Wave Solder) 260℃ for 10 sec
(4)PDTotal Device Power Dissipation, TA= 25℃:260mW;Derate Above 25℃:3.5 mW/℃
2.EMITTER
(1)IF,Forward Input Current:60 mA
(2)VR,Reverse Input Voltage:6.0 V
(3)IF(pk) Forward Current – Peak (1μs pulse, 300pps):3.0 A
(4)PD,LED Power Dissipation, TA=25℃:100mW;Derate Above 25℃:1.8 mW/℃
3.DETECTOR
(1)VCEO,Collector-Emitter Voltage:100 V
(2)PD,LED Power Dissipation, TA=25℃:200 mW;Derate Above 25℃:2.67 mW/℃

Features

(1)High BVCEO
– Minimum 100V for H11G1M
– Minimum 80V for H11G2M
– Minimum 55V for H11G3M
(2)High sensitivity to low input current(Min. 500% CTR at IF= 1mA)
(3)Low leakage current at elevated temperature(Max. 100μA at 80℃)
(4)Underwriters Laboratory (UL) recognized,File # E90700, Volume 2

Diagrams

<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/20128655735503.jpg">

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
H11G1SR2M
H11G1SR2M

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Transistor Output Optocouplers Hi Volt Photodarling

Data Sheet

0-1: $0.44
1-25: $0.39
25-100: $0.34
100-250: $0.30
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
H11G1
H11G1

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Data Sheet

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H11G1_Q
H11G1_Q

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H11G1300
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Data Sheet

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H11G1300W
H11G1300W

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Data Sheet

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H11G13S
H11G13S

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Data Sheet

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H11G13SD
H11G13SD

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Data Sheet

Negotiable