Product Summary
These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche andcommutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factorcorrection.
Parametrics
Absolute Maximum Ratings:
(1)Drain-Source Voltage:500V; (2)Drain Current,Continuous (TC = 25℃):5A; Continuous (TC = 100℃):3.0A; (3)Drain Current:20A; (4)Gate-Source voltage:±30V; (5)Single Pulsed Avalanche Energy:270mJ; (6)Avalanche Current:5A; (7)Repetitive Avalanche Energy:8.9mJ; (8)Peak Diode Recovery dv/dt:4.5V/ns; (9)Power Dissipation(TC = 25℃):39-89W; Derate above 25℃:0.31-0.71W/℃; (10)Operating and Storage Temperature Range:-55℃ to +150℃; (11)Maximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds:300℃
Features
(1)5A, 500V, RDS(on) = 1.5Ω@VGS = 10 V; (2)Low gate charge ( typical 12.8 nC); (3)Low Crss ( typical 9 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201271964641252.jpg">
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FDPF7N50U |
Fairchild Semiconductor |
MOSFET 500V N-CH MOSFET |
Data Sheet |
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FDPF045N10A |
Fairchild Semiconductor |
MOSFET 100V N-Channel PowerTrench MOSFET |
Data Sheet |
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FDPF085N10A |
Fairchild Semiconductor |
MOSFET 100V N-CHANNEL POWERTRENCH MOSFET |
Data Sheet |
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FDPF10N50FT |
Fairchild Semiconductor |
MOSFET UniFET 500V 10A |
Data Sheet |
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FDPF10N50UT |
Fairchild Semiconductor |
MOSFET 500V 8A N-Chan UniFET |
Data Sheet |
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FDPF10N60NZ |
Fairchild Semiconductor |
MOSFET 600V N-Chan MOSFET UniFET-II |
Data Sheet |
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FDPF10N60ZUT |
Fairchild Semiconductor |
MOSFET 600V 9A N-Chan FRFET UniFET |
Data Sheet |
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