CY7C199-25VC

Product Summary

The CY7C199 is a high-performance CMOS static RAMorganized as 32,768 words by 8 bits. Easy memory expansionis provided by an active LOW Chip Enable (CE) and activeLOW Output Enable (OE) and three-state drivers. This devicehas an automatic power-down feature, reducing the powerconsumption by 81% when deselected. The CY7C199 is in thestandard 300-mil-wide DIP, SOJ, and LCC packages.An active LOW Write Enable signal (WE) controls thewriting/reading operation of the memory. When CE and WEinputs are both LOW, data on the eight data input/output pins(I/O0 through I/O7) is written into the memory locationaddressed by the address present on the address pins (A0through A14). Reading the device is accomplished by selectingthe device and enabling the outputs, CE and OE active LOW,while WE remains inactive or HIGH. Under these conditions,the contents of the location addressed by the information onaddress pins are present on the eight data input/output pins.The input/output pins remain in a high-impedance state unlessthe chip is selected, outputs are enabled, and Write Enable(WE) is HIGH. A die coat is used to improve alpha immunity.

Parametrics

Maximum Ratings(Above which the useful life may be impaired. For user guide-lines, not tested.):
(1)Storage Temperature:-65℃to +150℃; (2)Ambient Temperature withPower Applied:-55℃ to +125℃; (3)Supply Voltage to Ground Potential(Pin 28 to Pin 14):-0.5V to+7.0V; (4)DC Voltage Applied to Outputs,in High-Z State:-0.5V to VCC + 0.5V;DC Input Voltage:-0.5V to VCC + 0.5V; (5)Output Current into Outputs (LOW):20 mAStatic Discharge Voltage:> 2001V(per MIL-STD-883, Method 3015); (6)Latch-up Current:> 200 mA

Features

(1)High speed:10 ns; (2)Fast tDOE; (3)CMOS for optimum speed/power; (4)Low active power:467 mW (max, 12 ns “L” version); (5)Low standby power:0.275 mW (max, "L" version); (6)2V data retention (“L”version only); (7)Easy memory expansion with CE and OE features; (8)TTL-compatible inputs and outputs; (9)Automatic power-down when deselected

Diagrams

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