Product Summary

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low 

on-resistance per silicon area.

Parametrics

Absolute Maximum Ratings(TA=25℃ Unless otherwise noted)

  1. Drain-Source Voltage:-30 to +30V
  2. Gate-source Voltage:±20V
  3. Continuous Drain Current, VGS @Ta=25℃:-5.3 to 7.3A
  4. Continuous Drain Current, VGS @Ta=70℃:-4.2 to 5.9A
  5. Pulsed Drain Current:-30 to +30A
  6. Continuous Drain Current(Diode conduction)-2.5 to 2.5A
  7. Maximum power dissipation,TA=25℃:2.5W;TA=70℃:1.6W
  8. Single Pulse Avalanche Energy:82 to 140mJ
  9. Avalanche Current:-2.8 to 40A
  10. Repetitive Avalanche Energy:0.20mJ
  11. Peak Diode Recovery dv/dt:-2.2 to 3.8V/ns
  12. Operating Junction and Storage Temperature Range:-55 to+150℃


Features

  1. Generation V Technology
  2. Ultra Low On-Resistance
  3. Complimentary Half Bridge
  4. Surface Mount
  5. Fully Avalanche Rated

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7389TRPBF
IRF7389TRPBF
International Rectifier
MOSFET MOSFT DUAL N/PCh 30V 7.3A
Data Sheet
0-1: $0.84
1-25: $0.52
25-100: $0.36
100-250: $0.34
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF710
IRF710
Vishay/Siliconix
MOSFET N-Chan 400V 2.0 Amp
Data Sheet
0-730: $0.79
730-1000: $0.76
1000-2000: $0.74
2000-5000: $0.73
IRF710, SiHF710
IRF710, SiHF710
Other

Data Sheet
Negotiable 
IRF710_R4943
IRF710_R4943
Fairchild Semiconductor
MOSFET TO-220AB
Data Sheet
Negotiable 
IRF7101
IRF7101
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-570: $0.45
IRF7101PBF
IRF7101PBF
International Rectifier
MOSFET
Data Sheet
0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
IRF7101TR
IRF7101TR
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-4000: $0.41