Product Summary
IRFD120PBF
Parametrics
Absolute Maximum Ratings:
- Continuous Drain Current, VGS @10V,Ta=25℃:1.3A
- Continuous Drain Current, VGS @10V,Ta=100℃:0.949A
- Pulsed Drain Current:10A
- Power dissipatiom:1.3W
- Linear derationg factor:0.0063W/℃
- Gate-to-source Voltage:±20V
- Single Pulse Avalanche Energy:100mJ
- Avalanche Current:1.3A
- Repetitive Avalanche Energy:0.13mJ
- Peak Diode Recovery dv/dt:5.5V/ns
- Operating Junction and Storage Temperature Range:-55 to+175℃
Features
- Dynamic dv/dt Rating
- Repetitive avalanche rated
- For automatic Insertion
- End stackable
- 175℃ Operating Temperature
- Fast switching
- Ease of paralleling
- Lead-Free
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() IRFD120PBF |
![]() Vishay Semiconductors |
![]() MOSFET 100V Single N-Channel HEXFET |
![]() Data Sheet |
![]()
|
|
||||||||||||
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
![]() |
![]() IRFD010 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 50V 1.7 Amp |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() IRFD010PBF |
![]() Vishay Semiconductors |
![]() MOSFET N-Chan 50V 1.7 Amp |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() IRFD014 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 1.7 Amp |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() IRFD014, SiHFD014 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() IRFD014PBF |
![]() Vishay Semiconductors |
![]() MOSFET N-Chan 60V 1.7 Amp |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() IRFD020 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 50V 2.4 Amp |
![]() Data Sheet |
![]()
|
|