Product Summary
IRFD120PBF
Parametrics
Absolute Maximum Ratings:
- Continuous Drain Current, VGS @10V,Ta=25℃:1.3A
- Continuous Drain Current, VGS @10V,Ta=100℃:0.949A
- Pulsed Drain Current:10A
- Power dissipatiom:1.3W
- Linear derationg factor:0.0063W/℃
- Gate-to-source Voltage:±20V
- Single Pulse Avalanche Energy:100mJ
- Avalanche Current:1.3A
- Repetitive Avalanche Energy:0.13mJ
- Peak Diode Recovery dv/dt:5.5V/ns
- Operating Junction and Storage Temperature Range:-55 to+175℃
Features
- Dynamic dv/dt Rating
- Repetitive avalanche rated
- For automatic Insertion
- End stackable
- 175℃ Operating Temperature
- Fast switching
- Ease of paralleling
- Lead-Free
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRFD120PBF |
Vishay Semiconductors |
MOSFET 100V Single N-Channel HEXFET |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRFD010 |
Vishay/Siliconix |
MOSFET N-Chan 50V 1.7 Amp |
Data Sheet |
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IRFD010PBF |
Vishay Semiconductors |
MOSFET N-Chan 50V 1.7 Amp |
Data Sheet |
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IRFD014 |
Vishay/Siliconix |
MOSFET N-Chan 60V 1.7 Amp |
Data Sheet |
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IRFD014, SiHFD014 |
Other |
Data Sheet |
Negotiable |
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IRFD014PBF |
Vishay Semiconductors |
MOSFET N-Chan 60V 1.7 Amp |
Data Sheet |
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IRFD020 |
Vishay/Siliconix |
MOSFET N-Chan 50V 2.4 Amp |
Data Sheet |
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