Product Summary
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible
on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety
of applications.
Image | Part No | Mfg | Description | Pricing (USD) |
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IRLU120N |
International Rectifier |
MOSFET N-CH 100V 10A I-PAK |
Data Sheet |
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IRLU120NPBF |
International Rectifier |
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv |
Data Sheet |
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