Product Summary

MITSUBISHI 2SC2312 is a silicon NPN epitaxial planner type transistor specificially designed for linear amplifiers operating in HF band.

Parametrics

Maximum Ratings：

(1)V CEO:60V;

(2)V ERO:5V;

(3)V CEO,REB=∞：20V;

(4)Ic=6A;

(5)Pc,Tc=25℃:25W;

(6)Tj:+150℃;

(7)Tstg:-55 to +150℃;

(8)Ta=25±3℃

Features

  1. High Output,High cain,:Po=17W,Gpe=10.5dB;@27MHz,12V
  2. Low IMD.3rd;-3OdB(TYP),11th:-62dB(TYP),and higher order IMD bellow than -65dB.@Vcc=13.5V,Po=14W
  3. Convenient plastic molded package.

Diagrams