FQN1N50CTA

500V N-Channel MOSFET

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Price:: US $0.50~2.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 10 :	2.00 / Piece
50 ~ 100 :	1.00 / Piece
500 ~ 1000 :	0.50 / Piece

PartNumber:: FQN1N50CTA

Brand:: Fairchild Semiconductor - Fairchild | D/C: 11+

Availability:: Supply Ability: 5000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-03-05

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Part Number:FQN1N50CTA
US $0.50 - 2.00
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piece

Product Summary

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices

are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts

based on half bridge topology.

Parametrics

Absolute Maximum Ratings:

VDSS, Drain-Source Voltage: 500 V
ID, Drain Current - Continuous (TC = 25℃): 0.38 A;Continuous (TC =100℃) 0.24 A
IDM, Drain Current - Pulsed: 3.04 A
VGSS ,Gate-Source Voltage:± 30 V
EAS,Single Pulsed Avalanche Energy:44.4 mJ
IAR,Avalanche Current:0.38 A
EAR,Repetitive Avalanche Energy:0.21 mJ
dv/dt ,Peak Diode Recovery dv/dt:4.5 V/ns
PD,Power Dissipation (TA=25℃) 0.89 W;Power Dissipation (TL=25℃) 2.08 W;Derate above 25℃:0.017 W/℃
TJ,TSTG Operating and Storage Temperature Range: -55 to +150℃
TL, Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds:300℃

Features

? 0.38 A, 500 V, RDS(on)= 6.0 Ω @ VGS = 10 V
? Low gate charge ( typical 4.9 nC )
? Low Crss ( typical 4.1 pF)
? Fast switching
? 100 % avalanche tested
? Improved dv/dt capability