Product Summary
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices
are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts
based on half bridge topology.
Parametrics
Absolute Maximum Ratings:
- VDSS, Drain-Source Voltage: 500 V
- ID, Drain Current - Continuous (TC = 25℃): 0.38 A;Continuous (TC =100℃) 0.24 A
- IDM, Drain Current - Pulsed: 3.04 A
- VGSS ,Gate-Source Voltage:± 30 V
- EAS,Single Pulsed Avalanche Energy:44.4 mJ
- IAR,Avalanche Current:0.38 A
- EAR,Repetitive Avalanche Energy:0.21 mJ
- dv/dt ,Peak Diode Recovery dv/dt:4.5 V/ns
- PD,Power Dissipation (TA=25℃) 0.89 W;Power Dissipation (TL=25℃) 2.08 W;Derate above 25℃:0.017 W/℃
- TJ,TSTG Operating and Storage Temperature Range: -55 to +150℃
- TL, Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds:300℃
Features
? 0.38 A, 500 V, RDS(on)= 6.0 Ω @ VGS = 10 V
? Low gate charge ( typical 4.9 nC )
? Low Crss ( typical 4.1 pF)
? Fast switching
? 100 % avalanche tested
? Improved dv/dt capability
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FQN1N50CTA |
Fairchild Semiconductor |
MOSFET N-CH/400V/5 0A/0.075OHM |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FQN1N50CTA |
Fairchild Semiconductor |
MOSFET N-CH/400V/5 0A/0.075OHM |
Data Sheet |
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|
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FQN1N60CBU |
Fairchild Semiconductor |
MOSFET 600V NCH MOSFET |
Data Sheet |
Negotiable |
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FQN1N60CTA |
Fairchild Semiconductor |
MOSFET 600V NCH MOSFET |
Data Sheet |
|
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FQN1N60C |
Other |
Data Sheet |
Negotiable |
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FQN1N50CBU |
Fairchild Semiconductor |
MOSFET N-CH/400V/5 A/.75OHM |
Data Sheet |
Negotiable |
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