Product Summary

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized 

device design, low on-resistance and cost-effectiveness.


Parametrics

ABSOLUTE MAXIMUM RATINGS TC = 25℃, unless otherwise noted:

  1. Drain-Source Voltage: 100V 
  2. Gate-Source Voltage:± 20V
  3. Continuous Drain Current VGS at 10 V,TC=25℃:9.2A;TC=100℃:6.5 A
  4. Pulsed Drain Current: 37A
  5. Linear Derating Factor:0.40W/℃
  6. Single Pulse Avalanche Energy:200mJ
  7. Repetitive Avalanche Current:9.2A
  8. Repetitive Avalanche Energy:6.0mJ
  9. Maximum Power Dissipation, TC=25℃:60W
  10. Peak Diode Recovery dV/dt:5.5V/ns
  11. Operating Junction and Storage Temperature Range:-55 to +175℃
  12. Soldering Recommendations (Peak Temperature) for 10s:300℃



Features

  1. Dynamic dV/dt Rating
  2. Repetitive Avalanche Rated
  3. 175℃ Operating Temperature
  4. Fast Switching
  5. Ease of Paralleling
  6. Simple Drive Requirements
  7. Lead (Pb)-free Available

Diagrams


Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF520S
IRF520S
Vishay/Siliconix
MOSFET N-Chan 100V 9.2 Amp
Data Sheet
Negotiable 
IRF520S, SiHF520S
IRF520S, SiHF520S
Other

Data Sheet
Negotiable 
IRF520SPBF
IRF520SPBF

MOSFET N-CH 100V 9.2A D2PAK
Data Sheet
0-1000: $0.35
IRF520STRL
IRF520STRL

MOSFET N-CH 100V 9.2A D2PAK
Data Sheet
Negotiable 
IRF520STRR
IRF520STRR

MOSFET N-CH 100V 9.2A D2PAK
Data Sheet
0-800: $0.47