Product Summary
Parametrics
Maximum Ratings:
(1)Collector-emitter voltage,VCE:1200V;
(2)DC collector current,TC = 25℃:6.2A;TC = 100℃:2.8A;
(3)Pulsed collector current, tp limited by Tjmax,I Cpuls:9.6A;
(4)Turn off safe operating area,VCE≤ 1200V, Tj≤ 150°C:9.6A;
(5)Gate-emitter voltage,VGE:±20V;
(6)Avalanche energy, single pulse,IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25℃,EAS:10mJ;
(7)Short circuit withstand time1),VGE = 15V, 100V≤ VCC≤ 1200V, Tj≤ 150℃,tSC:10μs;
(8)Power dissipation,TC=25℃,Ptot:62W;
(9)Operating junction and storage temperature,Tj , Tstg:-55℃ to +150℃;
(10)Soldering temperature, 1.6mm (0.063 in.) from case for 10s:260℃
Features
(1)40% lower Eoff compared to previous generation;
(2)Short circuit withstand time – 10 μs;
(3)Designed for:Motor controls;Inverter;SMPS;
(4)NPT-Technology offers:very tight parameter distribution;high ruggedness, temperature stable behaviour;parallel switching capability
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201273023485537.jpg">
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SGP02N120 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 1200V 2A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SGP02N120 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 1200V 2A |
Data Sheet |
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SGP02N60 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 600V 2A |
Data Sheet |
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SGP04N60 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 600V 4A |
Data Sheet |
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SGP06N60 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 600V 6A |
Data Sheet |
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SGP07N120 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 1200V 8A |
Data Sheet |
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