(China (Mainland))
Product Summary
Advantages: Easy to mount;Space savings;High power density.
PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
Parametrics
Maximum Ratings:
(1)VDSS, TJ = 25℃ to 150℃: 300 V;
(2)VDGR, TJ = 25℃ to 150℃; RGS = 1 MΩ: 300 V;
(3)VGSM :±20 V;
(4)ID25, TC = 25℃: 36 A;
(5)IDM,TC = 25℃, pulse width limited by TJM :90 A;
(6)IAR, TC = 25℃: 36 A;
(7)EAR, TC = 25℃: 30 mJ;
(8)EAS, TC = 25℃: 1.0 J;
(9)dv/dt, IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,TJ ≤ 150℃, RG=10 Ω: 10 V/ns;
(10)PD, TC = 25℃: 300 W;
(11)TJ: -55~ +150℃;
(12)TJM: 150℃;
(13)Tstg: -55~+150℃;
(14)TL, 1.6 mm (0.062 in.) from case for 10 s: 300℃;
(15)Maximum tab temperature for soldering TO-263 package for 10s: 260℃;
(16)Md, Mounting torque (TO-3P / TO-220): 1.13/10 Nm/lb.in.;
(17)Weight: TO-3P:5.5 g;TO-220: 4 g;TO-263: 3 g
Features
(1)International standard packages;
(2)Unclamped Inductive Switching (UIS) rated;
(3)Low package inductance - easy to drive and to protect
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/20128633728663.jpg">
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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Data Sheet |
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Data Sheet |
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Data Sheet |
Negotiable |
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