Product Summary

The ISSI  IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS  Dynamic Random Access Memories.
These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a
single row with access cycle time as short as 20 ns per 16-bit word.The Byte Write control, of upper and lower byte, makes the
IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems.

Parametrics

ABSOLUTE MAXIMUM RATINGS:

  1. Voltage on Any Pin Relative to GND, 5V: –1.0 to +7.0 V;3.3V :–0.5 to +4.6V
  2. Supply Voltage,5V: –1.0 to +7.0 V;3.3V: –0.5 to +4.6V
  3. Output Current :50 mA
  4. Power Dissipation:1 W
  5. Commercial Operation Temperature: 0 to +70℃;Industrial Operationg Temperature: -40 to +85℃
  6. Storage Temperature: –55 to +125℃

Features

1.TTL compatible inputs and outputs; tristate I/O
2.Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
— Self refresh Mode - 1,024 cycles / 128ms
3.JEDEC standard pinout
4.Single power supply:
— 5V ±  10% (IS41C16100)
— 3.3V ± 10% (IS41LV16100)
5.Byte Write and Byte Read operation via  two CAS
6. Industrail Temperature Range:-40 to 85℃

Diagrams