Product Summary
High-Voltage Switching Applications
Parametrics
Absolute Maximum Ratings at Ta = 25℃:
(1)Collector-to-Base Voltage:1500V;
(2)Collector-to-Emitter Voltage:700V;
(3)Emitter-to-Base Voltage:5V;
(4)Collector Current:5A;
(5)Collector Current:10A;
(6)Base Curret:1A;
(7)Collector Dissipation:3.0W,at Tc=25℃:50W;
(8)Junction Temperature:150℃;
(9)Storage Temperature:-55℃ to +150℃
Features
(1)High speed (Adoption of MBIT process).;
(2)High breakdown voltage (VCBO=1500V).;
(3)High reliability (Adoption of HVP process).;
(4)On-chip damper diode.
Diagrams
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![]() 2SC5388 |
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![]() 2SC5000 |
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![]() 2SC5001TLQ |
![]() ROHM Semiconductor |
![]() Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3 |
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![]() 2SC5001TLR |
![]() ROHM Semiconductor |
![]() Transistors Bipolar (BJT) NPN 20V 10A |
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![]() 2SC5002 |
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![]() 2SC5003 |
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![]() Negotiable |
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![]() 2SC5004 |
![]() Other |
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![]() Negotiable |
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