Product Summary

High-Voltage Switching Applications

Parametrics

Absolute Maximum Ratings at Ta = 25℃:

(1)Collector-to-Base Voltage:1500V; 

(2)Collector-to-Emitter Voltage:700V; 

(3)Emitter-to-Base Voltage:5V; 

(4)Collector Current:5A; 

(5)Collector Current:10A; 

(6)Base Curret:1A; 

(7)Collector Dissipation:3.0W,at Tc=25℃:50W; 

(8)Junction Temperature:150℃; 

(9)Storage Temperature:-55℃ to +150℃

Features

(1)High speed (Adoption of MBIT process).; 

(2)High breakdown voltage (VCBO=1500V).; 

(3)High reliability (Adoption of HVP process).; 

(4)On-chip damper diode.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
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2SC5388
2SC5388

Other


Data Sheet

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Image Part No Mfg Description Data Sheet Download Pricing
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2SC5000
2SC5000

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2SC5001TLQ
2SC5001TLQ

ROHM Semiconductor

Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3

Data Sheet

0-1: $0.63
1-25: $0.55
25-100: $0.42
100-500: $0.28
2SC5001TLR
2SC5001TLR

ROHM Semiconductor

Transistors Bipolar (BJT) NPN 20V 10A

Data Sheet

0-2500: $0.24
2500-5000: $0.24
2SC5002
2SC5002

Other


Data Sheet

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2SC5003
2SC5003

Other


Data Sheet

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2SC5004
2SC5004

Other


Data Sheet

Negotiable