Product Summary

Fuji Power MOSFET SuperFAP-G series Target Specification

Parametrics

Absolute Maximum Ratings (Tc=25℃ unless otherwise specified):

(1)Drain-Source Voltage:500V; 

(2)Continuous Drain Current:±19A; 

(3)Pulsed Drain Current:±76A; 

(4)Gate-Source Voltage:±30V; 

(5)Repetitive and Non-Repetitive Maximum Avalanche Current:19A; 

(6)Non-Repetitive Maximum Avalanche Energy:245.3mJ; 

(7)Maximum Drain-Source dV/dt:20kV/μs; 

(8)Peak Diode recovery dV/dt:5kV/μs; 

(9)Maximum Power Dissipation,PD@Tc=25℃:95W;PD@Ta=25℃:2.16W; 

(10)Operating and Storage:150℃; 

(11)Temperature range:-55~+150℃