Product Summary

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

Parametrics

ABSOLUTE MAXIMUM RATINGS TC = 25℃, unless otherwise noted:

  1. Drain-Source Voltage: 100V
  2. Gate-Source Voltage:± 20V
  3. Continuous Drain Current VGS at 10 V,TC=25℃:28A;TC=100℃:20 A
  4. Pulsed Drain Current: 110A
  5. Linear Derating Factor:1.0W/℃
  6. Linear Derating Factor (PCB Mount):0.025℃
  7. Single Pulse Avalanche Energy:230mJ
  8. Avalanche Current:28A
  9. Repetitive Avalanche Energy:15mJ
  10. Maximum Power Dissipation, TC=25℃:150W;Maximum Power Dissipation (PCB Mount),TA = 25℃ :3.7W
  11. Peak Diode Recovery dV/dt:5.5V/ns
  12. Operating Junction and Storage Temperature Range:-55 to +175℃
  13. Soldering Recommendations (Peak Temperature) for 10s:300℃

Features

1.Halogen-free According to IEC 61249-2-21 Definition
2.Surface Mount
3.Available in Tape and Reel
4.Dynamic dV/dt Rating
5.Repetitive Avalanche Rated
6.175℃ Operating Temperature
7.Fast  Switching
8.Ease of Paralleling
9.Compliant to RoHS Directive 2002/95/EC

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF540S
IRF540S
Vishay/Siliconix
MOSFET N-Chan 100V 28 Amp
Data Sheet
Negotiable 
IRF540S, SiHF540S
IRF540S, SiHF540S
Other

Data Sheet
Negotiable 
IRF540SPBF
IRF540SPBF
Vishay/Siliconix
MOSFET N-Chan 100V 28 Amp
Data Sheet
0-1: $1.12
1-10: $1.07
10-100: $0.57
100-250: $0.53
IRF540STRLPBF
IRF540STRLPBF
Vishay/Siliconix
MOSFET N-Chan 100V 28 Amp
Data Sheet
0-1: $1.43
1-10: $1.13
10-25: $1.08
25-100: $1.03
IRF540STRL
IRF540STRL
Vishay/Siliconix
MOSFET N-Chan 100V 28 Amp
Data Sheet
Negotiable 
IRF540STRR
IRF540STRR
Vishay/Siliconix
MOSFET N-Chan 100V 28 Amp
Data Sheet
Negotiable 
IRF540STRRPBF
IRF540STRRPBF
Vishay/Siliconix
MOSFET N-Chan 100V 28 Amp
Data Sheet
0-1: $1.51
1-10: $1.20
10-25: $1.15
25-100: $1.09