(China (Mainland))
Product Summary
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Parametrics
Maximum Ratings:
- Continuous drain current，TC=33℃:8A
- Pulsed drain current,TC=25℃:32A
- Avalanche current,limited by Tjmax:8A
- Avalanche energy,periodic limited by Tjmax:13mJ
- Avalanche energy, single pulse,ID=8A, VDD=50V, RGS=25Ω,L=16.3 mH, Tj=25℃:570mJ
- Gate source voltage:±20V
- Power dissipation,TC=25℃:150W
- Operating temperature:-55℃ to +150℃
- Storage temperature:-55℃ to +150℃
- Thermal resistance, chip case:<0.83K/W
- hermal resistance, chip to ambient :75K/W
- DIN humidity category, DIN 40 040:E
- IEC climatic category, DIN IEC 68-1:55 / 150 / 56
Features
1. N channel
2. Enhancement mode
3. Avalanche-rated
Diagrams
| Image | Part No | Mfg | Description |  |
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Data Sheet |
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BUZ900X4S |
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BUZ901DP |
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BUZ901X4S |
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Data Sheet |
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BUZ902P |
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Data Sheet |
Negotiable |
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