Product Summary

P-Channel MOS FET High Speed Power Switching

Parametrics

Absolute Maximum Ratings (Ta = 25℃):

(1)Drain to source voltage:-30V; 

(2)Gate to source voltage:±20V; 

(3)Drain current:-2A; 

(4)Drain peak current:-4A; 

(5)Body to drain diode reverse drain current:-2A; 

(6)Channel dissipation:1W; 

(7)Channel temperature:150℃; 

(8)Storage temperature:-55℃ to +150℃

Features

(1)Low on-resistance,RDS(on)=0.18Ω typ. (at VGS=–10V, ID=–1A); 

(2)Low drive current; 

(3)High speed switching; 

(4)4V gate drive devices

Diagrams

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2SJ484
2SJ484

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Image Part No Mfg Description Data Sheet Download Pricing
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2SJ401(Q)
2SJ401(Q)


MOSFET P-CH 60V 20A TO-220FL

Data Sheet

0-100: $1.62
2SJ401(TE24L,Q)
2SJ401(TE24L,Q)

Toshiba

MOSFET MOSFET P-Ch 60V 20A Rdson=0.045Ohm

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