(China (Mainland))
Product Summary
P-Channel MOS FET High Speed Power Switching
Parametrics
Absolute Maximum Ratings (Ta = 25℃):
(1)Drain to source voltage:-30V;
(2)Gate to source voltage:±20V;
(3)Drain current:-2A;
(4)Drain peak current:-4A;
(5)Body to drain diode reverse drain current:-2A;
(6)Channel dissipation:1W;
(7)Channel temperature:150℃;
(8)Storage temperature:-55℃ to +150℃
Features
(1)Low on-resistance,RDS(on)=0.18Ω typ. (at VGS=–10V, ID=–1A);
(2)Low drive current;
(3)High speed switching;
(4)4V gate drive devices
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SJ484 |
Other |
|
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
2SJ401(TE24L,Q) |
Toshiba |
MOSFET MOSFET P-Ch 60V 20A Rdson=0.045Ohm |
Data Sheet |
Negotiable |
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2SJ407(F) |
Toshiba |
MOSFET MOSFET P-Ch 200V 5A Rdson 1 Ohm |
Data Sheet |
Negotiable |
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2SJ415 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SJ416 |
Other |
|
Data Sheet |
Negotiable |
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|
2SJ417 |
Other |
|
Data Sheet |
Negotiable |
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|
2SJ418 |
Other |
|
Data Sheet |
Negotiable |
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