(China (Mainland))
Product Summary
2SJ509
Parametrics
Maximum Rating (Ta=25℃):
- Drain -Source Voltage:-100V
- Drain-Gate Voltage:-100V
- Gate-source Voltage:±20V
- Drain Current,DC=-1A;Pulse=-3A
- Drain Power Dissipation(Ta=25℃):0.9W
- Single Pulse Avalanche Energy:136.5mJ
- Avalanche current:-1A
- Repetitive Avalanche Energy:0.09mJ
- Channel Temperature:150℃
- Storage Temperature Range:-55~+150℃
Features
- 4V Gate Drive
- Low Drain-source ON Resistance:Rds(ON)=1.35Ω(typ)
- High Forward Transfer Admittance:lYfsl=0.7S(typ)
- Low leakage current:IDSS=-100μA(VDS=-100V)
- Enhancement-Mode:Vth=-0.8~-2.0V(VDS=-10V,ID=-1mA)
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SJ509 |
Other |
|
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
2SJ501 |
Other |
|
Data Sheet |
Negotiable |
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|
2SJ502 |
Other |
|
Data Sheet |
Negotiable |
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|
2SJ503 |
Other |
|
Data Sheet |
Negotiable |
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|
2SJ504 |
Other |
|
Data Sheet |
Negotiable |
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|
2SJ505 |
Other |
|
Data Sheet |
Negotiable |
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|
2SJ505(L) |
Other |
|
Data Sheet |
Negotiable |
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