Product Summary

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFET

with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination

structure, gives the lowest RDS(on) per area,exceptional avalanche and dv/dt capabilities and unrivalled gate charge and 

switching characteristics.

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
STP30NS15LFP
STP30NS15LFP

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
STP300NH02L
STP300NH02L

STMicroelectronics

MOSFET N Ch 600V 19A Pwr MESH IGBT

Data Sheet

Negotiable 
STP3015L
STP3015L

Other


Data Sheet

Negotiable 
STP3020L
STP3020L

Other


Data Sheet

Negotiable 
STP30N05
STP30N05

Other


Data Sheet

Negotiable 
STP30N05FI
STP30N05FI

Other


Data Sheet

Negotiable 
STP30N06
STP30N06

Other


Data Sheet

Negotiable