Product Summary
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs
with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination
structure, gives the lowest RDS(on) per area,exceptional avalanche and dv/dt capabilities and unrivalled gate charge and
switching characteristics.
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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STP30NS15LFP |
Other |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
STP300NH02L |
STMicroelectronics |
MOSFET N Ch 600V 19A Pwr MESH IGBT |
Data Sheet |
Negotiable |
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STP3015L |
Other |
Data Sheet |
Negotiable |
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STP3020L |
Other |
Data Sheet |
Negotiable |
|
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STP30N05 |
Other |
Data Sheet |
Negotiable |
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STP30N05FI |
Other |
Data Sheet |
Negotiable |
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STP30N06 |
Other |
Data Sheet |
Negotiable |
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