Product Summary
PNP transistor in a SOT23 plastic package.
Parametrics
LIMITING VALUES:
In accordance with the Absolute Maximum Rating System
- collector-base voltage, open emitter:-50V
- collector-emitter voltage, open base; Ic=-10 mA:-45V
- emitter-base voltage, open collector:-5V
- collector current (DC):-500mA
- peak collector current:-1A
- peak base current:-200mA
- total power dissipation Tamb≤25℃:250mW
- storage temperature:-65℃ to +150℃
- junction temperature:150℃
- operating ambient temperature:-65℃ to +150℃
Features
1.High current (max. 500 mA)
2.Low voltage (max. 45 V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BC807 |
Rectron |
Transistors Bipolar (BJT) Gen Pur Trans PNP,0.8A,45V |
Data Sheet |
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BC807 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-7 |
Data Sheet |
Negotiable |
|
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BC807,215 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-7 |
Data Sheet |
|
|
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BC807.16TR |
Central Semiconductor |
Transistors Bipolar (BJT) PNP 350Mn |
Data Sheet |
|
|
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BC80716 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 PNP GP AMP |
Data Sheet |
Negotiable |
|
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BC807-16 |
Taiwan Semiconductor |
Transistors Bipolar (BJT) Transistor 300mW |
Data Sheet |
|
|
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BC807-16 /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
Negotiable |
|
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BC807-16 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-7 |
Data Sheet |
Negotiable |
|