Product Summary
                                                  	PNP transistor in a SOT23 plastic package.
                                                  
Parametrics
LIMITING VALUES:
In accordance with the Absolute Maximum Rating System
- collector-base voltage, open emitter:-50V
- collector-emitter voltage, open base; Ic=-10 mA:-45V
- emitter-base voltage, open collector:-5V
- collector current (DC):-500mA
- peak collector current:-1A
- peak base current:-200mA
- total power dissipation Tamb≤25℃:250mW
- storage temperature:-65℃ to +150℃
- junction temperature:150℃
- operating ambient temperature:-65℃ to +150℃
		
	
		
	
Features
1.High current (max. 500 mA)
2.Low voltage (max. 45 V).
Diagrams

| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  |  BC807 |  Rectron |  Transistors Bipolar (BJT) Gen Pur Trans PNP,0.8A,45V |  Data Sheet |  
 |  | ||||||||||||
|  |  BC807 T/R |  NXP Semiconductors |  Transistors Bipolar (BJT) TRANS GP TAPE-7 |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  BC807,215 |  NXP Semiconductors |  Transistors Bipolar (BJT) TRANS GP TAPE-7 |  Data Sheet |  
 |  | ||||||||||||
|  |  BC807.16TR |  Central Semiconductor |  Transistors Bipolar (BJT) PNP 350Mn |  Data Sheet |  
 |  | ||||||||||||
|  |  BC80716 |  Fairchild Semiconductor |  Transistors Bipolar (BJT) SOT-23 PNP GP AMP |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  BC807-16 |  Taiwan Semiconductor |  Transistors Bipolar (BJT) Transistor 300mW |  Data Sheet |  
 |  | ||||||||||||
|  |  BC807-16 /T3 |  NXP Semiconductors |  Transistors Bipolar (BJT) TRANS GP TAPE-13 |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  BC807-16 T/R |  NXP Semiconductors |  Transistors Bipolar (BJT) TRANS GP TAPE-7 |  Data Sheet |  Negotiable |  | ||||||||||||
 (China (Mainland))
 (China (Mainland)) 
                         
                        
 
                                    

