(China (Mainland))
Product Summary
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieveextremely low
on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use
in a wide variety of applications.Parametrics
Absolute Maximum Ratings:
- Continuous Drain Current,TC=25℃, VGS @ -10V:-74A
- Continuous Drain Current, TC=100℃,VGS @ -10V:-52A
- Pulsed Drain Current:-260A
- Power Dissipation,TC=25℃:200W
- Linear Derating Factor:1.3W/℃
- Gate-to-Source Voltage:±20V
- Single Pulse Avalanche Energy:930mJ
- Avalanche Current:-38A
- Repetitive Avalanche Energy:20mJ
- Peak Diode Recovery dv/dt:-5.0V/ns
- Operating Junction and Storage Temperature Range:-55 to+175℃;Soldering Temperature, for 10 seconds 300℃ (1.6mm from case )
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175℃ Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated
- Lead-Free
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF4905PBF |
International Rectifier |
MOSFET MOSFT PCh -55V -74A 20mOhm 120nC |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
IRF400 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
IRF4000 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
IRF4104 |
|
MOSFET N-CH 40V 75A TO-220AB |
Data Sheet |
|
|
||||||||||||
|
IRF4104GPBF |
International Rectifier |
MOSFET |
Data Sheet |
|
|
||||||||||||
|
IRF4104L |
|
MOSFET N-CH 40V 75A TO-262 |
Data Sheet |
Negotiable |
|
||||||||||||
|
IRF4104LPBF |
|
MOSFET N-CH 40V 75A TO-262 |
Data Sheet |
|
|
||||||||||||
